|
Advanced Plasma Cleaning System
By Richard Mitro, Gatan, Inc.
|
GATAN introduced a state-of-the-art
plasma cleaning system for TEM and SEM applications
at the 2005 M&M Meeting. Advanced Plasma Cleaning
System is a new generation plasma system engineered
on new concepts and the latest technology resulting
in better performance, simplified use and consistent
cleaning results. Ths Advanced Plasma Cleaning Systemis
radically different and more effective than any plasma
cleaning system available.
With all plasma cleaning systems, the
first and most important question is always: “Why
is it necessary to plasma clean samples? Aren’t
they already clean?” The answer is NO. Most samples
are contaminated to some degree, and the amount may
be sufficient to cause problems when examined in modern
electron microscopes. |

Advanced Plasma Cleaning System
|
The origin of sample contamination
can be attributed to one or a combination of sources. The
most common form of contamination results from sample preparation
and normal handling. Examples include: embedding and mounting
polymers (G-1, G-2, etc.), the polishing media and lubricants,
the residue remaining after solvent rinsing, and finally normal
handling.
Plasma cleaning itself originated
within the semiconductor industry many years ago and became
the industry standard for wafer cleaning. More recently, it
was adapted for plasma cleaning TEM and SEM samples. The primary
purpose of plasma cleaning is to remove carbonaceous materials
on the sample in order to improve sample imaging quality.
The key here is to clean samples without changing elemental
composition, structural characteristics or creating surface
damage.
Plasma Cleaning Benefits
- Enhanced imaging capability
- Improved accuracy when performing composition microanalysis
- Longer viewing & acquisition times for EDX and EBSD
in a SEM
- Use of smaller probe size; a “must” for STEM
and EELS analysis in a TEM
Advanced Features
The goal in designing SOLARUS was to deliver value to our
customers. We wanted a plasma system offering flexibility,
ease of use, superior repeatability and high throughput. Our
unique design exceeds these goals. We started with a real-time
RF auto-match and variable RF power supply (10W – 65W)
to ensure optimum plasma power and low loss under any cleaning
condition. We then incorporated the H2/O2 gas recipe (Patent
Pending). This unique chemistry provides superior cleaning
with less sputter damage to all samples including holey carbon
films and allows samples to remain significantly cooler during
cleaning than with the traditional Ar/O2 gas recipe. The additional
mass flow controllers (MFC) support three independent process
gases such as H2, O2 and Ar for accurate gas control and long
term plasma stability. Finally, the interactive touch screen
interface offers seven pre-programmed recipes with optimized
process parameters for greater consistency and repeatability.
Easy
Operation
Our Advanced Plasma Cleaning Systemis designed to provide
consistent results quickly and easily for any user regardless
of skills or experience. The interactive touch screen interface
makes managing the cleaning process simple by offering continuous
feedback including full-time diagnostics. The Advanced Plasma
Cleaning Systemis also multi-lingual offering a choice of
six operating languages: English, French, German, Chinese,
Japanese and Korean.
Simple Four-Step Operation
1. Load the sample
2. Select a recipe.
3. Touch START to begin the cleaning cycle.
4. Touch VENT to remove the sample.
Sample Loading
Loading and cleaning samples in the Advanced Plasma Cleaning
System is simple and fast. The front loading chamber ports
accept either one or two side entry TEM sample holders; adapters
accept any manufacturers TEM holder. The chamber also has
easy access through the top loading lid for cleaning multiple
TEM grids (> 50 individual grids) or multiple SEM samples.
Process
The full-time turbo drag pumping system speeds up the entire
cleaning cycle. Typical run rates are less than 2 minutes
for two TEM samples in TEM holders, versus up to 20 minutes
for other plasma cleaners in the market.
• Pump down - 50 seconds vs. 3 minutes.
• Cleaning rates 30sec – 120sec vs. 2min –
10min.
• Venting - 5 seconds vs. 6 minutes.
Data Points
1. TEM silicon sample showing cleaning efficiency
2. TEM Holey carbon film
3. TEM Lacey carbon “hole”
4. SEM semiconductor sample
For complete product and ordering
information on our
Advanced Plasma Cleaning System, please contact your local
Gatan Sales
office.

Holey Carbon Film Sample contaminated
with 1 drop of oil in 50 ml acetone


Lacey Carbon Hole (6 months old off the
shelf)

Contaminated semiconductor sample showing
scan window

After 10min H2/O2 cleaning all contamination
removed with no apparent Si damage
|