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Model 682 PECS™
Precision Etching Coating System for SEM, TEM and LM
The ideal instrument for any application requiring slope cutting, sample etching and/or high-resolution sputter coating. The PECS™ is a unique ion beam based etching and sputter coating system producing exceptionally large, clean, viewable areas of specimens for Scanning Electron Microscope (SEM), Transmission Electron Microscope (TEM) and Light Microscope (LM) applications. The unique design features incorporated into the PECS™ make it very versatile. Add to this the Model 682.40000 Slope cutter, a unique tool for exposing cross sections.
Alternative or supplement to wet chemical etching
Controlled repeatable results (Ion gun voltage, ion beam current and etching time)
Etching and coating in the same vacuum chamber reduces sample handling
Sample coating immediately after etching eliminates sample contamination
Includes a Film Thickness Monitor for accurate control of film thickness
High sample throughput, patented Whisperlok™ for fast and simple specimen exchange
Whisperlok™ features both sample rotation and rocking to ensure uniform etching and coating
Reactive Ion Beam Etching (RIBE System)
No wet chemical handling or disposal hazards
PECS Application note
In general it’s not possible to reveal the structure of all phases in a Heterogeneous material simultaneously by conventional chemical etching methods if the components differ in their chemical properties. Ion Beam Etching Techniques however work quite well in many of these cases. One of the more important applications for this method in metallography is etching of metal combinations with extreme difference in chemical potential. Our examples show several Heterogeneous materials from various manufacturing processes that were prepared by ion beam etching. Application examples include build-up welds made out of Nickel containing weld material on plain steel or GGG40, welds with a Ni interface layer, and corrosion or wear protection layers produced by powder metallurgical processes. The differences in chemical composition between substrate and surface layer are demonstrated by corresponding Electron Microprobe profiles (See Graf poster).
Test Procedure and Results
The ion beam etching was performed with the PECS (Precision Etching and Coating System). The broad beam ion source in this system generates a 10mm beam diameter at vertical incidence to the sample, depending on the ion gun parameters (ion gun voltage and ion beam current). By tilting the specimen, i.e. altering the incident angle, and rotating the specimen during the process
the etching diameter can be further enlarged. Although the chemical compositions of the metals that build up the composites are very different, ion beam etching reveals the structure of all compounds equally and simultaneously. DIC (Differential Interference Contrast) can be used to enhance the characteristic contrast that stems from the etching due to ion bombardment. Sputtering yields of the individual compounds play an important role in optimizing ion beam etching of composite materials. Although the chemical characteristics of surface layer and substrate reveal enormous differences the sputtering yields are similar.
Click here for a copy of Ion Beam Etching of Metal Composites using Gatan's PECS (I.Gräf)
Optional Slope Cutter
Model 682.40000 Slope Cutter Tool (SC-Tool) – It offers cross sectional cutting of homogeneous/heterogeneous materials while minimizing mechanical deformation or damage.
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Now AvailableSEM Techniques Using the Gatan Precision Etching and Coating System (PECS™) is a Click here and we'll send you one! |
Specifications
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Ion Source |
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Ion guns |
Three Penning ion guns with miniature rare earth magnets |
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Ion Beam Energy |
1.0keV to 10.0keV |
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Beam Diameter |
Etching gun 5mm FWHM; sputtering guns 1mm FWHM |
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Ion Current Density |
10mA/cm² Peak |
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Gas throughput |
Argon at 0.1cc/minute/gun |
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Etched Area |
7mm - 10mm dependent on gun energy |
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Etching Rate |
Approximately 10µm/hr for Silicon and 3µm/hr for Tungsten at 10.0keV |
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Airlock Assembly |
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Sample Holder |
Accepts 1 ¼ inch (32mm)Metallographic mounts and multiple SEM stubs |
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Sample Rotation |
Variable speed 10 - 60 rpm |
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Sample Tilt |
Fixed angle or variable rocking angle (0° - 90°) |
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Sample Rocking |
Variable speed 5° /sec - 36° /sec |
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Option |
TEM adapters for side-entry TEM or SEM holders |
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Coating |
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Coating Rate |
Approximately 0.5Å/sec for Carbon and 1.5Å/sec for Chromium at 10.0keV |
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Coating Area |
Uniform over a 30mm diameter |
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Target Holder |
Two dual target sets, externally selectable while under vacuum |
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Target Materials |
Choice of four target materials (see complete list) |
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Thickness Monitor |
Standard - Displays coating rate and total coating thickness |
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Vacuum |
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Dry Pumping System |
Two stage diaphragm pump backing a 70 l/sec Turbo Drag Pump |
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Pressure |
5E - 6Torr (6.6E - 4Pa) base pressure |
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6E - 5Torr (8E - 3Pa) operating pressure |
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Vacuum Gauge |
Cold-cathode for specimen chamber |
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Solid state sensor for backing pressure |
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Specimen Exchange |
Gatan Whisperlok™, specimen exchange time <1 minute |
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Liquid-nitrogen Trap |
Approximately 5 hour capacity (Standard) |
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Activated Carbon Filter |
Installed in the vacuum exhaust to reduce iodine emissions to a safe level |
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Dimensions and Utilities |
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Overall Size |
560mmW x 480mmD x 430mmH (22"W x 19"D x 17"H) |
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Shipping Weight |
45kg (100lbs) |
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Power Requirements |
Universal voltage 100VAC - 240VAC, 50/60Hz |
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User to specify voltage to insure correct line cord |
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Power Consumption |
200 Watts during operation, 100Watts with ion guns off |
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Gas Requirements |
Argon gas at 70psi (4.82 bar) |
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Alternative gas (Other inert) at 20psi (1.38 bar) |
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Iodine gas for reactive ion beam etching (Iodine crystals supplied by customer) |
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Warranty |
One year |







