Specimen Preparation

Model 682 PECS™

Precision Etching Coating System for SEM, TEM and LM

The ideal instrument for any application requiring slope cutting, sample etching and/or high-resolution sputter coating. The PECS™ is a unique ion beam based etching and sputter coating system producing exceptionally large, clean, viewable areas of specimens for Scanning Electron Microscope (SEM), Transmission Electron Microscope (TEM) and Light Microscope (LM) applications. The unique design features incorporated into the PECS™ make it very versatile. Add to this the Model 682.40000 Slope cutter, a unique tool for exposing cross sections.

Alternative or supplement to wet chemical etching

Controlled repeatable results (Ion gun voltage, ion beam current and etching time)

Etching and coating in the same vacuum chamber reduces sample handling

Sample coating immediately after etching eliminates sample contamination

Includes a Film Thickness Monitor for accurate control of film thickness

High sample throughput, patented Whisperlok™ for fast and simple specimen exchange

Whisperlok™ features both sample rotation and rocking to ensure uniform etching and coating

Reactive Ion Beam Etching (RIBE System)

No wet chemical handling or disposal hazards

PECS Application note

In general it’s not possible to reveal the structure of all phases in a Heterogeneous material simultaneously by conventional chemical etching methods if the components differ in their chemical properties. Ion Beam Etching Techniques however work quite well in many of these cases. One of the more important applications for this method in metallography is etching of metal combinations with extreme difference in chemical potential. Our examples show several Heterogeneous materials from various manufacturing processes that were prepared by ion beam etching. Application examples include build-up welds made out of Nickel containing weld material on plain steel or GGG40, welds with a Ni interface layer, and corrosion or wear protection layers produced by powder metallurgical processes. The differences in chemical composition between substrate and surface layer are demonstrated by corresponding Electron Microprobe profiles (See Graf poster).

Test Procedure and Results
The ion beam etching was performed with the PECS (Precision Etching and Coating System). The broad beam ion source in this system generates a 10mm beam diameter at vertical incidence to the sample, depending on the ion gun parameters (ion gun voltage and ion beam current). By tilting the specimen, i.e. altering the incident angle, and rotating the specimen during the process
the etching diameter can be further enlarged. Although the chemical compositions of the metals that build up the composites are very different, ion beam etching reveals the structure of all compounds equally and simultaneously. DIC (Differential Interference Contrast) can be used to enhance the characteristic contrast that stems from the etching due to ion bombardment. Sputtering yields of the individual compounds play an important role in optimizing ion beam etching of composite materials. Although the chemical characteristics of surface layer and substrate reveal enormous differences the sputtering yields are similar.

Click here for a copy of Ion Beam Etching of Metal Composites using Gatan's PECS (I.Gräf)

Optional Slope Cutter

Model 682.40000 Slope Cutter Tool (SC-Tool) – It offers cross sectional cutting of homogeneous/heterogeneous materials while minimizing mechanical deformation or damage.

Now Available

SEM Techniques Using the Gatan Precision Etching and Coating System (PECS™) is a
32-page booklet of beautiful images acquired with the Gatan PECS and 'recipes' for how to achieve the best results using the PECS. Topics include Cleaning, Coating, Etching, Metallographics, EBSD, DIE Packages, and Sputtering Rate Charts for C, Cr, Pt and AuPd. A must-have for any materials scientist.

Click here and we'll send you one!

 

 

Specifications

Ion Source

 

Ion guns

Three Penning ion guns with miniature rare earth magnets

Ion Beam Energy

1.0keV to 10.0keV

Beam Diameter

Etching gun 5mm FWHM; sputtering guns 1mm FWHM

Ion Current Density

10mA/cm² Peak

Gas throughput

Argon at 0.1cc/minute/gun

Etched Area

7mm - 10mm dependent on gun energy

Etching Rate

Approximately 10µm/hr for Silicon and 3µm/hr for Tungsten at 10.0keV


 

Airlock Assembly

 

Sample Holder

Accepts 1 ¼ inch (32mm)Metallographic mounts and multiple SEM stubs

Sample Rotation

Variable speed 10 - 60 rpm

Sample Tilt

Fixed angle or variable rocking angle (0° - 90°)

Sample Rocking

Variable speed 5° /sec - 36° /sec

Option

TEM adapters for side-entry TEM or SEM holders


 

Coating

 

Coating Rate

Approximately 0.5Å/sec for Carbon and 1.5Å/sec for Chromium at 10.0keV

Coating Area

Uniform over a 30mm diameter

Target Holder

Two dual target sets, externally selectable while under vacuum

Target Materials

Choice of four target materials (see complete list)

Thickness Monitor

Standard - Displays coating rate and total coating thickness


 

Vacuum

 

Dry Pumping System

Two stage diaphragm pump backing a 70 l/sec Turbo Drag Pump

Pressure

5E - 6Torr (6.6E - 4Pa) base pressure


6E - 5Torr (8E - 3Pa) operating pressure

Vacuum Gauge

Cold-cathode for specimen chamber


Solid state sensor for backing pressure

Specimen Exchange

Gatan Whisperlok™, specimen exchange time <1 minute

Liquid-nitrogen Trap

Approximately 5 hour capacity (Standard)

Activated Carbon Filter

Installed in the vacuum exhaust to reduce iodine emissions to a safe level


 

Dimensions and Utilities

Overall Size

560mmW x 480mmD x 430mmH (22"W x 19"D x 17"H)

Shipping Weight

45kg (100lbs)

Power Requirements

Universal voltage 100VAC - 240VAC, 50/60Hz

 

User to specify voltage to insure correct line cord

Power Consumption

200 Watts during operation, 100Watts with ion guns off

Gas Requirements

Argon gas at 70psi (4.82 bar)


Alternative gas (Other inert) at 20psi (1.38 bar)


Iodine gas for reactive ion beam etching (Iodine crystals supplied by customer)


 

Warranty

One year