Fast joint EELS / EDS color map across a 32 nm transistor device

32 nm Transistor device

Methods

probe-corrected Jeol ARM 200 TEM/STEM microscope
C-FEG emission gun
GIF Quantum® ER system
Jeol Centurio SDD EDS detector (0.98 sr)
O K at 532 eV (red); Ti L at 456 eV (green); Ni L at 855 eV (light blue); N K at 401 eV (yellow); Hf M at 1662 eV (purple)
voltage: 200 kV
data taken in STEM mode
EELS core-loss spectrum (300 – 2300 eV): 1.5 ms
EDS spectrum (0 – 20 keV): 1.5 ms
d
ataset size: 256 x 256 pixels
t
otal exposure time: just over 2 min