Model 683 Met-Etch

Preparation of Metallographic Materials by Ion Beam Etching

The Met-Etch offers an ion beam etching-only alternative to the multi-functional PECS™ system. It is a cost effective, affordable, next-generation apparatus for the preparation of metallographic samples that do not require sputter coating. Typical applications include Scanning Electron Microscopy (SEM or high resolution FESEM) and Light Microscopy (LM). Quality samples are produced in a clean environment, under a controlled process with reproducible results. The ion beam etching technique used avoids the hazards and costs associated with wet chemical etching. The Met-Etch offers numerous unique features including the optional Model 682.40000 Slope cutter, a unique tool for exposing cross sections.

Alternative or supplement to wet chemical etching

Simple and easy to use with controlled repeatable results

Reduced sample handling

No sample contamination

High sample throughput, Whisperlok™ for fast and simple specimen exchange

Whisperlok features both sample rotation and rocking to ensure uniform etching and coating

Low cost of ownership

Reactive Ion Beam Etching (RIBE) System

No wet chemical handling or disposal hazards

Optional Slope Cutter

Model 682.40000 Slope Cutter Tool (SC-Tool) – It allows cross sectional cutting of homogeneous/heterogeneous materials while minimizing mechanical deformation or damage.

Specifications

Ion Guns

 

Ion gun

One Penning ion gun with miniature rare earth magnets

Ion Beam Energy

1.0keV to 10.0keV

Beam Diameter

5mm FWHM

Ion Current Density

10mA/cm2 Peak

Gas throughput

Argon at 0.1cc/minute/gun

Etched Area

7mm - 10mm dependent on gun energy

Etching Rate

Approximately 10µm/hr for Silicon and 3µm/hr for Tungsten at 10.0keV

 

Airlock Assembly

 

Sample Holder

Accepts 1¼ inch (32mm) Metallographic mounts and multiple SEM stubs

Sample Rotation

Variable speed 10 - 60rpm

Sample Tilt

Fixed angle or variable rocking angle (0° - 90°)

Sample Rocking

Variable speed 5°/sec - 36°/sec

Option

TEM adapters for side-entry TEM or SEM holders

 

Vacuum

 

Dry Pumping System

Two-stage diaphragm pump backing a 70 l/sec Turbo Drag Pump

Pressure

5E - 6Torr (6.6E - 4Pa) base pressure

 

6E - 5Torr (8E - 3Pa) operating pressure

Vacuum Gauge

Cold-cathode for specimen chamber

 

Solid state sensor for backing pressure

Specimen Exchange

Gatan Whisperlok™, specimen exchange time <1 minute

Carbon Filter

Installed in the vacuum exhaust to reduce iodine emissions to a safe level

 

Dimensions and Utilities

Overall Size

560mmW x 480mmD x 430mmH (22"W x 19"D x 17"H)

Shipping Weight

45kg (100lbs)

Power Requirements

Universal voltage 100VAC - 240VAC, 50/60Hz

 

User to specify voltage to insure correct line cord

Power Consumption

200 Watts during operation, 100Watts with ion guns off

Gas Requirements

Argon gas at 70psi (4.82 bar)

 

Alternative gas (Other inert) at 20psi (1.38 bar)

 

Iodine gas for reactive ion beam etching (Iodine crystals supplied by customer)

 

 

Warranty

1 Year

 

 

© Gatan, Inc. 2007. All rights reserved.