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Model 683 Met-Etch
Preparation of Metallographic Materials by Ion Beam
Etching
The Met-Etch offers an ion beam etching-only alternative
to the multi-functional PECS system. It is a
cost effective, affordable, next-generation apparatus
for the preparation of metallographic samples that
do not require sputter coating. Typical applications
include Scanning Electron Microscopy (SEM or high
resolution FESEM) and Light Microscopy (LM). Quality
samples are produced in a clean environment, under
a controlled process with reproducible results. The
ion beam etching technique used avoids the hazards
and costs associated with wet chemical etching. The
Met-Etch offers numerous unique features including
the optional Model 682.40000 Slope cutter, a unique
tool for exposing cross sections.
Alternative or supplement to wet chemical etching
Simple and easy to use with controlled repeatable
results
Reduced sample handling
No sample contamination
High sample throughput, Whisperlok™ for fast and simple specimen exchange
Whisperlok features both sample rotation and rocking
to ensure uniform etching and coating
Low cost of ownership
Reactive Ion Beam Etching (RIBE) System
No wet chemical handling or disposal hazards
Optional Slope Cutter
Model 682.40000 Slope Cutter Tool (SC-Tool) –
It allows cross sectional cutting of homogeneous/heterogeneous
materials while minimizing mechanical deformation
or damage.
Specifications
| Ion Guns |
|
| Ion gun |
One Penning ion gun with miniature rare earth magnets |
| Ion Beam Energy |
1.0keV to 10.0keV |
| Beam Diameter |
5mm FWHM |
| Ion Current Density |
10mA/cm2 Peak |
| Gas throughput |
Argon at 0.1cc/minute/gun |
| Etched Area |
7mm - 10mm dependent on gun energy |
| Etching Rate |
Approximately 10µm/hr for Silicon and 3µm/hr
for Tungsten at 10.0keV |
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| Airlock Assembly |
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| Sample Holder |
Accepts 1¼ inch (32mm) Metallographic mounts and
multiple SEM stubs |
| Sample Rotation |
Variable speed 10 - 60rpm |
| Sample Tilt |
Fixed angle or variable rocking angle (0° - 90°) |
| Sample Rocking |
Variable speed 5°/sec - 36°/sec |
| Option |
TEM adapters for side-entry TEM or SEM holders |
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| Vacuum |
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| Dry Pumping System |
Two-stage diaphragm pump backing a 70 l/sec Turbo Drag
Pump |
| Pressure |
5E - 6Torr (6.6E - 4Pa) base pressure |
| |
6E - 5Torr (8E - 3Pa) operating pressure |
| Vacuum Gauge |
Cold-cathode for specimen chamber |
| |
Solid state sensor for backing pressure |
| Specimen Exchange |
Gatan Whisperlok, specimen exchange time <1 minute |
| Carbon Filter |
Installed in the vacuum exhaust to reduce iodine emissions
to a safe level |
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Dimensions and Utilities |
| Overall Size |
560mmW x 480mmD x 430mmH (22"W x 19"D x 17"H) |
| Shipping Weight |
45kg (100lbs) |
| Power Requirements |
Universal voltage 100VAC - 240VAC, 50/60Hz |
| |
User to specify voltage to insure correct line cord |
| Power Consumption |
200 Watts during operation, 100Watts with ion guns off |
| Gas Requirements |
Argon gas at 70psi (4.82 bar) |
| |
Alternative gas (Other inert) at 20psi (1.38 bar) |
| |
Iodine gas for reactive ion beam etching (Iodine crystals
supplied by customer) |
| |
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| Warranty |
1 Year |
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© Gatan, Inc. 2007. All rights reserved. |