Electrical activity of grain boundaries in polycrystalline silicon solar cells
R. Johnson

Electrical activity of grain boundaries in polycrystalline silicon solar cells

A quantified EBIC map of a polycrystalline silicon solar cell. Several grain boundary segments are revealed to be electrically active (high recombination rate) and appear dark in the EBIC map (indicated by red arrows) while some appear to be electrically inactive (indicated by green arrow). Electrically active defects reduce the overall efficiency of the solar cell.