Advanced STEM Detectors

Models 806, 807

High-angle annular dark field (HAADF), annular dark field (ADF) plus bright and dark field (BF/DF) detectors for STEM imaging optimized for electron energy loss spectroscopy (EELS).

Request QuoteSupport Request

Advantages

For EELS mapping and scanning transmission electron microscopy (STEM) imaging, proper control of detector angles is critical in both data collection efficiency and its interpretation. The Advanced STEM detectors are optimized to work with EELS systems to provide seamless collection of the entire angular range of scattered electrons for an enhanced understanding of each sample’s chemical and compositional properties.

Enhances sensitivity

Simplifies detector operation

Seamlessly integrates with Gatan cameras and spectrometers

For more information pertaining to EELS techniques, step-by-step instructions on analytical experiments, and access to downloadable spectra, please visit EELS.info, an educational site that is dedicated to supporting the EELS community.

Datasheet

Advanced STEM Detectors

Application

Unlock the power of electron microscopy with Gatan—explore cutting-edge applications, dive into expert-led webinars, and discover insights through detailed application notes that fuel scientific breakthroughs.

Reveal EM Insights

High speed EELS composition analysis, in DualEELS mode, of metal alloy ohmic contacts for the fabrication of III-V MOSFET devices

Reveal EM Insights

Media Gallery

Immerse yourself in the world of scientific discovery—explore striking microscopy images that reveal the unseen, alongside videos and tutorials showcasing Gatan technology in action.

Discover the Details

Image of interplanetary dust particle; STEM tilt series acquired with a 806 HAADF detector from -61˚ to 68˚; aligned, reconstructed and visualized using 3D reconstruction and 3D visualization software; the iso-surfaces highlight two different intensity levels in the reconstruction. Data courtesy of Dr. Ilke Arslan of Sandia National Laboratories, Livermore, California and Dr. John P. Bradley of Lawrence Livermore National Laboratory, Livermore, California.

Jointly acquired HAADF and MAADF signals

The HAADF signal (left) contrast is easily interpreted in terms of mass thickness of the material while the diffraction contrast MAADF signal (right) reveals highly detailed structural changes in the material. The optimized geometry makes this possible.

$Nano-beam electron diffraction full 2D strain mapping$

a) HAADF image of a GaAs/GaAsP multilayer laminate; b) Integrated diffraction pattern of the superlattice structure along the [011] zone axis; c) Virtual BF image extracted from 4D data cube quantifying strain down to 1.2 nm resolution in full 2D area in eyy; d) exx strain for same area shown. Data courtesy V. B. Ozdol et al., National Center for Electron Microscopy, Lawrence Berkeley National Laboratory and Department of Materials Science and Engineering, University of California, Berkeley, California.