Application Note
Electron ptychography for atomic-scale defect analysis in two-dimensional materials
April 1, 2026
Semiconductor Materials and Devices
Unlock atomic-level insights into semiconductor materials and devices to resolve complex structures, optimize device performance, and drive innovation in microelectronics.
Driving innovation in electronics and nanotechnology
Semiconductors are the foundation of modern electronics, powering everything from integrated circuits to advanced sensors. Understanding their composition, interfaces, and defect mechanisms at the nanoscale is critical for improving device efficiency, reliability, and miniaturization. Gatan provides cutting-edge electron microscopy solutions that reveal these details with unmatched precision.
Why electron microscopy matters for semiconductor research
Device performance depends on complex interactions among semiconductor layers, dopant profiles, and interfacial structures. Our solutions help you:
- Visualize microstructure and phase distribution in semiconductor layers.
- Analyze elemental composition and dopant profiles for optimized performance.
- Detect defects and failure mechanisms such as dislocations, voids, and contamination.
- Correlate electrical properties with nanoscale morphology for predictive design.
Technologies to accelerate your research
Advanced microscopy and analytical techniques enable precise characterization of semiconductor materials and devices, uncovering critical structure–property relationships that drive performance, efficiency, and long-term reliability.
Cathodoluminescence (CL)
Provides unique nanoscale optical insights into materials by revealing crystal defects, electronic structure, and trace-element chemistry
Electron backscatter diffraction (EBSD)
Allows detailed microstructural analysis by mapping crystal orientations, phases, and grain boundaries
Electron energy loss spectroscopy (EELS)
Delivers atomic-scale insights into elemental composition and chemical bonding—enabling a deeper understanding of material properties.
Energy dispersive x-ray spectroscopy (EDS/EDX)
Facilitates rapid, reliable elemental analysis by detecting characteristic x-rays emitted from a sample, allowing researchers to identify and quantify elements.
eaSI Spectrum Imaging
Integrates EELS, EDS, 4D STEM, and more to deliver rich, correlated insights—advancing the understanding of complex, dynamic nanoscale phenomena
Imaging
Delivers high-resolution visualization of biological and inorganic specimens, enabling the study of ultrastructure, material growth, and failure mechanisms.
In-situ
Captures real-time nanoscale dynamics under controlled stimuli to uncover fundamental mechanisms and accelerate scientific discovery.
Integrated SEM
Combines EDS, EBSD, CL, BSE, and WDS into unified platforms—delivering comprehensive, high-resolution insights into complex materials.
Micro x-ray fluorescence (micro-XRF)
Delivers high-resolution, non-destructive elemental analysis—ideal for layered, sensitive, or irregular samples.
Wavelength dispersive x-ray spectroscopy (WDS)
Offers high spectral resolution and sensitivity, enabling precise identification and quantification of trace and light elements in complex samples.
Enabling results that drive innovation
Unlock the power of electron microscopy with Gatan—explore cutting-edge applications and discover insights through detailed application notes that fuel scientific breakthroughs.
Application Note
EDS analysis of Au-WS2 core–shell nanoparticles
January 30, 2026
Application Note
Energy-filtered 4D STEM reveals short-range ordering motifs in semiconductors
December 1, 2025
Application Note
Breakthroughs in light element detection using a large-area windowless EDS detector
November 24, 2025
Webinar
Dose-fractionated EELS spectrum image acquisition with direct detection cameras
May 8, 2025
Media Gallery
Immerse yourself in the world of scientific discovery—explore striking microscopy images that reveal the unseen, alongside webinars and tutorials showcasing Gatan technologies in action.