Application Note
Electron ptychography for atomic-scale defect analysis in two-dimensional materials
April 1, 2026
4D STEM
4D STEM is the capture of a full 2D diffraction pattern at each pixel position in a STEM map.
Overview
What is 4D STEM?
In scanning transmission electron microscopy (STEM), the electron beam is focused on an electron transparent specimen to make a probe from a few nanometers down to nearly atomic dimensions. Electrons interact with the specimen, and once they are scattered, different types of signals can be measured:
- X-rays (EDS)
- Backscattered electrons
- Light (cathodoluminescence)
- Auger electrons
- Secondary electrons
- Inelastically scattered electrons (energy loss spectroscopy)
- Elastically scattered electrons (diffraction)
In 4D STEM, the probe is rastered on the specimen in a 2D array. At each probe position, a 2D diffraction pattern is imaged on a pixelated detector, thus generating a 4D data cube that can be further analyzed.
Uses of 4D STEM
Below are examples of the boundless possibilities of 4D STEM applications in materials science. We encourage you to explore the extensive examples and detailed information on each method in Microscopy and Microanalysis 25, 563-582, 2019.
- Virtual imaging – Generate virtual SAED or virtual BF/DF images from a single 4D STEM dataset
- Orientation mapping – Study the crystallographic orientation of materials at very fine scales
- Strain mapping – Map strain distribution within materials via measuring local lattice distortions from diffraction patterns in the 4D data cube
- Differential phase contrast – Map local electric and magnetic fields by measuring subtle shifts in the transmitted electron beam's phase at each scan point
- Ptychography – Reconstruct the phase and amplitude of the electron wave passing through the sample to create ultra-high-resolution images with enhanced contrast and structural detail
Advantages of 4D STEM
| Capability | Advantage |
|---|---|
| High spatial and angular resolution | Enables materials characterization at nanometer or atomic scale, with high accuracy |
| Versatile data acquisition and flexible imaging modes | Captures full diffraction pattern at each scan position, enabling various post-processing analyses as listed above |
| Multimodal data acquisition | eaSI™ technology combines 4D STEM with EELS and EDS to comprehensively understand the specimen under study |
| Compatible with in-situ experiments | Adding dimension of time (5D dataset) enables real-time monitoring of structural changes under various conditions |
Applications
Unlock the power of electron microscopy with Gatan—explore cutting-edge applications, dive into expert-led webinars, and discover insights through detailed application notes that fuel scientific breakthroughs.
Webinar
Off the grid: Advanced scanning strategies for modern STEM
March 12, 2026
Application Note
Energy-filtered 4D STEM reveals short-range ordering motifs in semiconductors
December 1, 2025
Application Note
Nanobeam strain analysis using STEMx system and your existing Gatan in-situ camera
March 1, 2025
Application Note
The effect of convergence angle on strain measurement precision
February 1, 2025
Media Gallery
Immerse yourself in the world of scientific discovery—explore striking microscopy images that reveal the unseen, alongside videos and tutorials showcasing Gatan’s technology in action.
The new STEMx OIM package brings orientation mapping analysis to the STEMx integrated software tools. This is done by comparing the diffraction pattern at each pixel position to a set of simulated patterns for all phases and orientations in your specimen. Orientation data can even be exported to the EDAX OIM Analysis software for further processing.
Orientation map generated with STEMx OIM showing {111} texture of annealed Au thin film. Energy-filtered 4D STEM data was collected using a GIF Continuum with Stela system at 200 kV. Sample courtesy of J. Kacher, GA Tech.
4D STEM and virtual aperture imaging
Metro captures 4D STEM data with sharper detail and less background noise; it can collect a 128 x 128 (scan) x 512 x 512 (pattern) dataset in half a minute. This color image is a map of the brightest spot orientation and intensity from such a dataset. The material is boron nitride. The color hue in the map specifies the direction from center of the strongest spot in each diffraction pattern, while the brightness corresponds to the intensity of the peak.
2D diffraction pattern for each real space STEM
4D STEM diffraction data cube
4D STEM operating principle
