Application Note
Breaking through EDS limitations: A study on using WDS for silicon wafer contaminant detection
April 15, 2025
Tungsten
Element density: 19.25 g/cm3
Electron configuration: [Xe]4f145d46s2
Oxidation states: +6
X-ray peak intensities
A quick-reference for exploring x-ray peak intensities across element series (K, L, M, N) to support accurate EDS analysis in electron microscopy.
| K-Series | L-Series | M-Series | N-Series | ||||
|---|---|---|---|---|---|---|---|
| Kα | 59.305 | Ll | 7.385 | Mz | 1.383 | N | 0.215 |
| Kβ | 67.372 | Ln | 8.722 | Mα | 1.774 | ||
| Lα1 | 8.394 | Mβ | 1.835 | ||||
| Lβ1 | 9.669 | Mγ | 2.035 | ||||
| Lβ2 | 9.957 | M2N4 | 2.314 | ||||
| Lγ1 | 11.282 | ||||||
| Lγ2 | 11.605 | ||||||
Applications
Unlock the power of electron microscopy with Gatan—explore cutting-edge applications, dive into expert-led webinars, and discover insights through detailed application notes that fuel scientific breakthroughs.
Application Note
Virtual (BF/DF) imaging reveals the position and concentration of precipitates in a Ni-W alloy
July 1, 2024
Application Note
Use of a large area windowless EDS detector for quantitative analysis of heavy elements at high accelerating voltages
April 2, 2024
Application Note
Enhancements from EDS to WDS
January 24, 2024
Application Note
High-speed composition and chemical analysis of nanoelectronic materials with GIF Continuum
January 1, 2024
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