Application Note
Improved 4D STEM strain mapping of Ge/SiGe heterostructure defects via energy-filtered, precession-assisted 4D STEM
October 5, 2026
Silicon
Element density: 2.33 g/cm3
Electron configuration: [Ne]3s13p2
Oxidation states: +2,4/-4
X-ray peak intensities
A quick-reference for exploring x-ray peak intensities across element series (K, L, M, N) to support accurate EDS analysis in electron microscopy.
| K-Series | L-Series | M-Series | N-Series | ||||
|---|---|---|---|---|---|---|---|
| Kα | 1.739 | Ll | 0.060 | ||||
| Kβ | 1.829 | ||||||
Applications
Unlock the power of electron microscopy with Gatan—explore cutting-edge applications, dive into expert-led webinars, and discover insights through detailed application notes that fuel scientific breakthroughs.
Application Note
Acquiring precession-assisted 4D STEM data via pure software control in DigitalMicrograph
September 24, 2026
Application Note
Streamlined microanalysis in the SEM
November 1, 2025
Application Note
Breaking through EDS limitations: A study on using WDS for silicon wafer contaminant detection
April 15, 2025
Application Note
The effect of convergence angle on strain measurement precision
February 1, 2025
Media Gallery
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