Electron Energy-Loss Spectroscopy for Semiconductor Device Characterization
At EAG Laboratories, we analyze many different types of nanoengineered materials for researchers from the industry, national labs, and governmental agencies. For silicon devices, virtually all the critical materials problems are at the interfaces. STEM-EELS hyperspectral mapping is a powerful technique for studying materials' structure and chemistry down to atomic resolution. The industry widely employs it for materials characterization and failure analysis.
Live Virtual Workshop: Stela Hybrid Pixel Electron Detector for 4D STEM Diffraction
Using Structural Biology to Drive Pandemic Preparedness Webinar
Safe, effective, and scalable vaccines and therapeutics are needed to halt the ongoing SARS-CoV-2 pandemic. The receptor-binding domain (RBD) is immunodominant and the target of 90% of the neutralizing activity present in SARS-CoV-2 convlescent sera. To further understand this point, we structurally defined an RBD antigenic map using cryo-electron microscopy, ELISA, and BLI.
Instrumentation improvements for rapid in-situ EELS webinar
Spectroscopic mapping by STEM-EELS is a powerful technique for determining the structure and chemistry of a wide range of biological, natural, and engineered materials and interfaces down to atomic resolution. The continual push for more robust, sensitive, and localized characterization is enabled by significant and ongoing improvements to hardware throughout the STEM-EELS instrument.
Broad Argon Ion Beam Tool for EBSD Preparation Webinar
Electron backscatter diffraction (EBSD) is a critical technique for materials analysis in an SEM. EBSD provides far more than energy dispersive x-ray spectroscopy in that grain size, texture, grain orientation, and in many cases, secondary phases can be identified and their relationship in terms of grain orientation to the primary phase.